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Publication date Communities Collections Article title Author(s) Journal/Conference
25 May 2026 SERC Institute of Microelectronics Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanchao Li, Hui Teng Tan, Hanlin Xie, Lifei Xi, Chris Boothroyd, Geok Ing Ng ACS Applied Materials & Interfaces
6 May 2026 SERC Institute of Microelectronics CMOS-Compatible 200 mm 0.25 µm GaN-on-Si HEMT Process for FR3 Application Qingyun Xie, Yuan Gao, Hsien-Shun Wu, Yi Heng Leong, Hanlin Xie, Haorui Luo, Hui Teng Tan, Zhan Jiang Quek, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng 2026 10th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
30 Mar 2026 SERC Institute of Microelectronics GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts Yihao Zhuang, Siyu Liu, Qingyun Xie, Hanlin Xie, Tomita Kazuyoshi, Tetsu Kachi, Hiroshi Amano, Subramaniam Arulkumaran, Geok Ing Ng IEEE Electron Device Letters
10 Mar 2026 SERC Institute of Microelectronics Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanlin Xie, Geok Ing Ng Applied Physics Letters
18 Feb 2026 SERC Institute of Microelectronics Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs Gerui Zheng, Hanjie Li, Hanlin Xie, Leming Jiao, Xudong Jia, Geok Ing Ng, Kai Ni, Zijie Zheng, Xiao Gong Applied Physics Letters
22 Jan 2026 SERC Institute of Microelectronics GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB) Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote, Marianne Germain, K. Radhakrishnan, Geok Ing Ng IEEE Electron Device Letters
21 May 2025 SERC Institute of Microelectronics Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique Yihao Zhuang, Kumud Ranjan, Qingyun Xie, Hanlin Xie, Hanchao Li, Yue Wang, Siyu Liu, Geok Ing Ng physica status solidi (a)
18 Mar 2025 SERC Institute of Microelectronics Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng Applied Physics Letters
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
23 Oct 2024 SERC Institute of Microelectronics A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability Zhongzhiguang Lu, Hanchao Li, Hanlin Xie, Yihao Zhuang, Wang Wensong, Ng Geok Ing, Yuanjin Zheng IEEE Transactions on Electron Devices