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Publication date Communities Collections Article title Author(s) Journal/Conference
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
21 Oct 2024 SERC Institute of Microelectronics AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng IEEE Electron Device Letters
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters
21 Feb 2017 SERC Institute of Microelectronics Effectiveness of oxide trench array as a passive temperature compensation structure in AlN-on-silicon micromechanical resonators Andrew Randles, Pushpapraj Singh, Qingyun Xie, Nan Wang, Chengliang Sun, Xiaolin Zhang, Yuandong Gu Applied Physics Letters