| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 21 Oct 2024 | SERC | Institute of Microelectronics | AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets (Pending publish) | Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng | IEEE Electron Device Letters |
| 11 Jul 2024 | SERC | Institute of Microelectronics | Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si | Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng | Applied Physics Letters |
| 21 Feb 2017 | SERC | Institute of Microelectronics | Effectiveness of oxide trench array as a passive temperature compensation structure in AlN-on-silicon micromechanical resonators | Andrew Randles, Pushpapraj Singh, Qingyun Xie, Nan Wang, Chengliang Sun, Xiaolin Zhang, Yuandong Gu | Applied Physics Letters |