| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 16 May 2024 | SERC | Institute of Microelectronics | First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding (Pending publish) | Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng | physica status solidi (a) |
| 16 Oct 2014 | SERC | Data Storage Institute | Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition | Ji Rong, Subramaniam Arulkumaran, Geok Ing Ng, Li Yang, Zhi Hong Liu, Kian Siong Ang, Gang Ye, Hong Wang, Serene Lay Geok Ng | Applied Physics Letters |