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18 Mar 2025 SERC Institute of Microelectronics Improved device performance in <i>in situ</i> SiNx/AlN/GaN MIS-HEMTs with <i>ex situ</i> Al2O3 passivation at elevated temperatures (Pending publish) Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng Applied Physics Letters
16 May 2024 SERC Institute of Microelectronics First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng physica status solidi (a)
16 Oct 2014 SERC Data Storage Institute Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition Ji Rong, Subramaniam Arulkumaran, Geok Ing Ng, Li Yang, Zhi Hong Liu, Kian Siong Ang, Gang Ye, Hong Wang, Serene Lay Geok Ng Applied Physics Letters