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11 Feb 2025
SERC
Institute of Microelectronics
Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon
(Pending publish)
Siyu Liu,
Yihao Zhuang,
Hanchao Li,
Pengju Cui,
Qingyun Xie,
Yue Wang,
Hanlin Xie,
Kumud Ranjan,
Geok Ing Ng
physica status solidi (a)
21 Oct 2024
SERC
Institute of Microelectronics
AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets
Hanchao Li,
Hanlin Xie,
Qingyun Xie,
Siyu Liu,
Yue Wang,
Yuxuan Wang,
Kumud Ranjan,
Yihao Zhuang,
Xiao Gong,
Geok Ing Ng
IEEE Electron Device Letters
11 Jul 2024
SERC
Institute of Microelectronics
Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
Siyu Liu,
Yihao Zhuang,
Hanchao Li,
Qingyun Xie,
Yue Wang,
Hanlin Xie,
Kumud Ranjan,
Geok Ing Ng
Applied Physics Letters
16 May 2024
SERC
Institute of Microelectronics
First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding
Hanchao Li,
Hanlin Xie,
Yue Wang,
Lekina Yulia,
Kumud Ranjan,
Navab Singh,
Surasit Chung,
Kenneth E. Lee,
Subramaniam Arulkumaran,
Geok Ing Ng
physica status solidi (a)
16 Oct 2014
SERC
Data Storage Institute
Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
Ji Rong,
Subramaniam Arulkumaran,
Geok Ing Ng,
Li Yang,
Zhi Hong Liu,
Kian Siong Ang,
Gang Ye,
Hong Wang,
Serene Lay Geok Ng
Applied Physics Letters
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