Zheng, G., Li, H., Xie, H., Jiao, L., Jia, X., Ng, G. I., Ni, K., Zheng, Z., & Gong, X. (2026). Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs. Applied Physics Letters, 128(7). https://doi.org/10.1063/5.0309082
Abstract:
This work presents mechanistic insight into polarization-assisted charge trapping in GaN HEMTs and demonstrates an enhancement-mode (e-mode) device employing an antiferroelectric (AFE) Hf0.2Zr0.8O2 gate stack (AFE-HEMT). The AFE gate stack, featuring enhanced charge trapping capability and zero remnant polarization (Pr), allows complete utilization of trapped electrons for channel depletion, resulting in a stronger positive threshold voltage (VTH) shift compared with the ferroelectric (FE) gate stack. The AFE-HEMT achieves a VTH of 1.9 V, with a maximum drain current (ID_MAX) of 481 mA/mm and an on-resistance (RON) of 7.4 Ω mm. Incorporating a floating gate structure (AFE-FG-HEMT) further enhances VTH to 2.7 V with an RON of 6.5 Ω mm, significantly improves charge retention, and yields negligible VTH shift during positive bias stress, demonstrating a compelling pathway toward stable, normally off GaN power devices.
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Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - National Gallium Nitride Technology Centre - Proof of Concept (NGTC-POC)
Grant Reference no. : M23WTNG002
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Zheng, G., Li, H., Xie, H., Jiao, L., Jia, X., Ng, G. I., Ni, K., Zheng, Z., & Gong, X. (2026). Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs. Applied Physics Letters, 128(7). https://doi.org/10.1063/5.0309082 and may be found at https://doi.org/10.1063/5.0309082