Institute of Microelectronics

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Publication date Article title Author(s)
15 Jul 2026 Silicon carbide: a versatile CMOS-compatible material for integrated nonlinear and quantum photonics Ruoqi Bai, Zihao Zeng, Cedric Leow, Xianshu Luo, Nanxi Li
17 Jun 2026 Vertical Interconnects Characterization for 448 Gbps/lane Co-Packaged Optics using Double-Sided Probing Method Jiaqi Wu, Sajay Bhuvanendran Nair Gourikutty, Teck Guan Lim, Surya Bhattacharya
17 Jun 2026 Liquid Metal Cooling for High-Power Electronics Driven by Magnetohydrodynamic Effect Huicheng Feng, Bin He, Gongyue Tang, Xiaowu Zhang, Wei Kin Tan
17 Jun 2026 Process Development of Two-Stacked Chips with a Backside Embedded Two-Phase Cooling Solution Xiaowu Zhang, Boon Long Lau, Huicheng Feng, Gongyue Tang, Ming Chinq Jong, Surya Bhattacharya, Vempati Srinivasa Rao, B.S.S. Chandra Rao, Tran Van Nhat Anh
7 Jun 2026 Fully Al-based 0.25 μm 20 V GaN-on-Si Process with 3 W/mm for FR3 Hsien Shun Wu, Yuan Gao, Qingyun Xie, Yi Heng Leong, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng
25 May 2026 Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanchao Li, Hui Teng Tan, Hanlin Xie, Lifei Xi, Chris Boothroyd, Geok Ing Ng
6 May 2026 CMOS-Compatible 200 mm 0.25 µm GaN-on-Si HEMT Process for FR3 Application Qingyun Xie, Yuan Gao, Hsien-Shun Wu, Yi Heng Leong, Hanlin Xie, Haorui Luo, Hui Teng Tan, Zhan Jiang Quek, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng
30 Mar 2026 GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts Yihao Zhuang, Siyu Liu, Qingyun Xie, Hanlin Xie, Tomita Kazuyoshi, Tetsu Kachi, Hiroshi Amano, Subramaniam Arulkumaran, Geok Ing Ng
20 Mar 2026 High Efficiency Terahertz Beam Steering Metasurfaces Using Vanadium Dioxide-Based Cross-Polarization Converters Li Mengyao, Gu Zhonghua, Saurav Prakash, Ariando Ariando, Prakash Pitchappa
10 Mar 2026 Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanlin Xie, Geok Ing Ng