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23 Oct 2024 SERC Institute of Microelectronics A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability (Pending publish) Zhongzhiguang Lu, Hanchao Li, Hanlin Xie, Yihao Zhuang, Wensong Wang, Geok Ing Ng, Yuanjin Zheng IEEE Transactions on Electron Devices
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters