GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)

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GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)
Title:
GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB)
Journal Title:
IEEE Electron Device Letters
Keywords:
Publication Date:
22 January 2026
Citation:
Zhuang, Y., Liu, S., Cui, P., Nguyen, V. C., Xie, Q., Lingaparthi, R., Li, H., Xie, H., Nethaji, D., Nur, A., Seah, X. T. L., Degroote, S., Germain, M., Radhakrishnan, K., & Ng, G. I. (2026). GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (gt;60%) and Low Noise (lt;1.2 dB). IEEE Electron Device Letters, 47(3), 482–485. https://doi.org/10.1109/led.2026.3651778
Abstract:
This Letter reports a GaN-on-Si HEMT technology with 60 to 150 nm T-gate achieving simultaneous high efficiency and low noise at low voltage ( 3−6 V) RF operation, suitable for monolithic integrated FR2 mobile Transmit/Receive (T/R) modules. At 30 GHz and VDS=5 V, in continuous wave operation, the fabricated Lg=100 nm device delivered a saturated output power of 1.2 W/mm with a record-high peak power-added efficiency (PAE) of 62% while maintaining a state-of-the-art minimum noise figure ( NFmin ) of 1.1 dB. Enabled by the optimized epitaxial structure and fabrication process, the proposed technology, even with moderate scaling, offers a cost-effective solution for FR2 T/R modules.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - White Space Manufacturing, Trade, and Connectivity funding
Grant Reference no. : M23WSNG001

This research / project is supported by the A*STAR - Manufacturing, Trade, and Connectivity Industry Alignment Fund Pre-Positioning (IAF-PP
Grant Reference no. : M22L3a0112
Description:
© 2026 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
0741-3106
1558-0563
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