Citation:
Zhuang, Y., Liu, S., Cui, P., Nguyen, V. C., Xie, Q., Lingaparthi, R., Li, H., Xie, H., Nethaji, D., Nur, A., Seah, X. T. L., Degroote, S., Germain, M., Radhakrishnan, K., & Ng, G. I. (2026). GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (gt;60%) and Low Noise (lt;1.2 dB). IEEE Electron Device Letters, 47(3), 482–485. https://doi.org/10.1109/led.2026.3651778