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Publication date Communities Collections Article title Author(s) Journal/Conference
27 Sep 2025 SERC Institute of Materials Research and Engineering Cooling-mediated N2 plasma engineering of facet-selective iron nitride frameworks for enhanced electrocatalysis Bo Ouyang, Yuechuan Du, Jiankang Nie, Yaping Li, Zheng Zhang, Siyu Liu, Erjun Kan, Rajdeep Singh Rawat Journal of Materials Science & Technology
21 May 2025 SERC Institute of Microelectronics Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique Yihao Zhuang, Kumud Ranjan, Qingyun Xie, Hanlin Xie, Hanchao Li, Yue Wang, Siyu Liu, Geok Ing Ng physica status solidi (a)
31 Mar 2025 SERC Institute of Materials Research and Engineering Controllable reduction mechanism of rust via thermal-field-modulated plasma strategy Bo Ouyang, Wenbin Huang, Feiya Yu, Yuechuan Du, Zheng Zhang, Avinash Chaurasiya, Siyu Liu, Jipeng Zhu, Erjun Kan, Rajdeep Singh Rawat Applied Surface Science
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
21 Oct 2024 SERC Institute of Microelectronics AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng IEEE Electron Device Letters
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters