GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts

GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts

IEEE Electron Device Letters

10.1109/LED.2026.3678989

https://doi.org/10.1109/led.2026.3678989

Yihao Zhuang, Siyu Liu, Qingyun Xie, Hanlin Xie, Tomita Kazuyoshi, Tetsu Kachi, Hiroshi Amano, Subramaniam Arulkumaran, Geok Ing Ng

30 March 2026

Zhuang, Y., Liu, S., Xie, Q., Xie, H., Kazuyoshi, T., Kachi, T., Amano, H., Arulkumaran, S., & Ng, G. I. (2026). GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts. IEEE Electron Device Letters, 1. https://doi.org/10.1109/led.2026.3678989

This letter reports GaN-on-Si high-electron-mobility-transistors (HEMTs) employing reactive-sputtered Ge-doped n++-GaN ohmic contacts for low-voltage FR2 applications. A low sputtered n++-GaN/2DEG interfacial resistance of 0.06 Ω·mm is achieved for the InAlN/GaN heterostructure. The transistor achieves a low on-resistance of 0.91 Ω·mm and a maximum drain current of 2.03 A/mm, resulting in excellent output power of 0.51, 1.25, and 2.44 W/mm at VDS = 3, 5, and 8 V at 28 GHz, respectively. These results demonstrate the strong potential of RF GaN HEMTs employing sputtered n++-GaN ohmic contacts.

Publisher Copyright

This research / project is supported by the A*STAR - White Space Manufacturing, Trade, and Connectivity Funding
Grant Reference no. : M23WSNG001

This research / project is supported by the A*STAR - Manufacturing, Trade, and Connectivity Industry Alignment Fund Pre-Positioning (IAF-PP)
Grant Reference no. : M22L3a0112

© 2026 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

https://oar.a-star.edu.sg/communities-collections/articles/23195

0741-3106
1558-0563

Institute of Microelectronics