MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness

MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness

Advanced Materials

10.1002/adma.202002704

http://dx.doi.org/10.1002/adma.202002704

Jianwei Chai, Shiwun Tong, Changjian Li, Carlos Manzano, Bing Li, Yanpeng Liu, Ming Lin, Laimun Wong, Jianwei Cheng, Jing Wu, Aaron Lau, Qidong Xie, Stephen J. Pennycook, Henry Medina, Ming Yang, Shijie Wang, DongZhi Chi

Mechanical Engineering, General Materials Science, Mechanics of Materials

02 September 2020

Chai, J., Tong, S., Li, C., Manzano, C., Li, B., Liu, Y., Lin, M., Wong, L., Cheng, J., Wu, J., Lau, A., Xie, Q., Pennycook, S. J., Medina, H., Yang, M., Wang, S., & Chi, D. (2020). MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness. Advanced Materials, 32(42), 2002704. Portico. https://doi.org/10.1002/adma.202002704

Resistive random-access memories (ReRAMs) based on transition metal dichalcogenide layers are promising physical sources for random number generation (RNG). However, most ReRAM devices undergo performance degradation from cycle to cycle, which makes preserving a normal probability distribution during operation a challenging task. Here, ReRAM devices with excellent stability are reported by using a MoS2/polymer heterostructure as active layer. The stability enhancement manifests in outstanding cumulative probabilities for both high- and low-resistivity states of the memory cells. Moreover, the intrinsic values of the high-resistivity state are found to be an excellent source of randomness as suggested by a Chi-square test. It is demonstrated that one of these cells alone can generate ten distinct random states, in contrast to the four conventional binary cells that would be required for an equivalent number of states. This work unravels a scalable interface engineering process for the production of high-performance ReRAM devices, and sheds light on their promising application as reliable RNGs for enhanced cybersecurity in the big data era.

Publisher Copyright

This research / project is supported by the A*STAR, Science and Engineering Research Council - Pharos 2D Program
Grant Reference no. : 152-70-00012

This research / project is supported by the Ministry of Education - AcRF Tier2 grant
Grant Reference no. : MOE2019-T2-1-150

This research / project is supported by the A*STAR - SERC Pharos Programme
Grant Reference no. : A1685b0005

Overseas FUnding:- 1) Research Fund of State Key Laboratory of Mechanics and Control of Mechanical Structures (MCMS-I-0419G02) 2) Program for Innovative Talents and Entrepreneur in Jiangsu and the Fundamental Research Funds for the Central Universities (NC2018001, NP2019301, NJ2019002).

This is the peer reviewed version of the following article: Chai, J., Tong, S., Li, C., Manzano, C., Li, B., Liu, Y., Lin, M., Wong, L., Cheng, J., Wu, J., Lau, A., Xie, Q., Pennycook, S. J., Medina, H., Yang, M., Wang, S., & Chi, D. (2020). MoS2/Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness. Advanced Materials, 32(42), 2002704. Portico. https://doi.org/10.1002/adma.202002704, which has been published in final form at doi.org/10.1002/adma.202002704. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited

https://oar.a-star.edu.sg/communities-collections/articles/18332

0935-9648
1521-4095

Institute of Materials Research and Engineering