Search results

Publication date Communities Collections Article title Author(s) Journal/Conference
25 May 2026 SERC Institute of Microelectronics Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanchao Li, Hui Teng Tan, Hanlin Xie, Lifei Xi, Chris Boothroyd, Geok Ing Ng ACS Applied Materials & Interfaces
30 Mar 2026 SERC Institute of Microelectronics GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts Yihao Zhuang, Siyu Liu, Qingyun Xie, Hanlin Xie, Tomita Kazuyoshi, Tetsu Kachi, Hiroshi Amano, Subramaniam Arulkumaran, Geok Ing Ng IEEE Electron Device Letters
10 Mar 2026 SERC Institute of Microelectronics Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanlin Xie, Geok Ing Ng Applied Physics Letters
22 Jan 2026 SERC Institute of Microelectronics GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB) Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote, Marianne Germain, K. Radhakrishnan, Geok Ing Ng IEEE Electron Device Letters
21 May 2025 SERC Institute of Microelectronics Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique Yihao Zhuang, Kumud Ranjan, Qingyun Xie, Hanlin Xie, Hanchao Li, Yue Wang, Siyu Liu, Geok Ing Ng physica status solidi (a)
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
23 Oct 2024 SERC Institute of Microelectronics A Hybrid GaN HEMT Model Merging Artificial Neural Networks and ASM-HEMT for Parameter Precision and Scalability Zhongzhiguang Lu, Hanchao Li, Hanlin Xie, Yihao Zhuang, Wang Wensong, Ng Geok Ing, Yuanjin Zheng IEEE Transactions on Electron Devices
21 Oct 2024 SERC Institute of Microelectronics AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng IEEE Electron Device Letters
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters