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21 May 2025 SERC Institute of Microelectronics Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique Yihao Zhuang, Kumud Ranjan, Qingyun Xie, Hanlin Xie, Hanchao Li, Yue Wang, Siyu Liu, Geok Ing Ng physica status solidi (a)
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)
21 Oct 2024 SERC Institute of Microelectronics AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng IEEE Electron Device Letters
11 Jul 2024 SERC Institute of Microelectronics Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si Siyu Liu, Yihao Zhuang, Hanchao Li, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng Applied Physics Letters
16 May 2024 SERC Institute of Microelectronics First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng physica status solidi (a)
16 Nov 2023 SERC Institute of Microelectronics A 12-16 GHz GaN-on-Si Power Amplifier with >38dBm Output Power and >28% PAE for Very Small Aperture Terminal Application in SatCom Robin Kalyan, Nur Aisyah Binte Kuyob, Hanlin Xie, Gao Yuan, Kumud Ranjan, M Kumarasamy Raja, Kevin Tshun Chuan Chai, Leung Kafai, Navab Singh 14th International Conference on Nitride Semiconductor