First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

physica status solidi (a)

10.1002/pssa.202300953

http://dx.doi.org/10.1002/pssa.202300953

Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng

16 May 2024

Li, H., Xie, H., Wang, Y., Yulia, L., Ranjan, K., Singh, N., Chung, S., Lee, K. E., Arulkumaran, S., & Ing Ng, G. (2024). First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding. Physica Status Solidi (a). Portico. https://doi.org/10.1002/pssa.202300953

In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems.

Publisher Copyright

This research / project is supported by the Agency for Science, Technology and Research (A*STAR) - RIE2025 Manufacturing, Trade, and Connectivity Programmatic Fund
Grant Reference no. : M21K6b0134

This is the peer reviewed version of the following article: Li, H., Xie, H., Wang, Y., Yulia, L., Ranjan, K., Singh, N., Chung, S., Lee, K. E., Arulkumaran, S., & Ing Ng, G. (2024). First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding. Physica Status Solidi (a). Portico. https://doi.org/10.1002/pssa.202300953, which has been published in final form at https://doi.org/10.1002/pssa.202300953. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

https://oar.a-star.edu.sg/communities-collections/articles/21271

1862-6300
1862-6319

Institute of Microelectronics