CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers

CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers
Title:
CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers
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Optics Express
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Publication Date:
28 August 2019
Citation:
Zhengji Xu, Yuan Dong, Chih-Kuo Tseng, Ting Hu, Jinchao Tong, Qize Zhong, Nanxi Li, Larry Sim, Keng Heng Lai, Ying Lin, Dongdong Li, Yu Li, Vladimir Bliznetsov, Yuan-Hsing Fu, Shiyang Zhu, Qunying Lin, Dao Hua Zhang, Yuandong Gu, Navab Singh, and Dim-Lee Kwong, "CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers," Opt. Express 27, 26060-26069 (2019)
Abstract:
The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass producible polarization controller based on Si meta surface is in high demand for the next generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.
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PublisherCopyrights
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Description:
Full paper is available for download at: https://doi.org/10.1364/OE.27.026060
ISSN:
1094-4087
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