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18 Mar 2025 SERC Institute of Microelectronics Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng Applied Physics Letters
22 Jun 2024 SERC Institute of Microelectronics Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes Pradip Dalapati, Subramaniam Arulkumaran, Dinesh Mani, Hanchao Li, Hanlin Xie, Yue Wang, Geok Ing Ng Materials Science and Engineering: B
16 May 2024 SERC Institute of Microelectronics First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng physica status solidi (a)
16 Oct 2014 SERC Data Storage Institute Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition Ji Rong, Subramaniam Arulkumaran, Geok Ing Ng, Li Yang, Zhi Hong Liu, Kian Siong Ang, Gang Ye, Hong Wang, Serene Lay Geok Ng Applied Physics Letters