Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer

Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer

ACS Applied Electronic Materials

10.1021/acsaelm.2c01019

http://dx.doi.org/10.1021/acsaelm.2c01019

Jun-Young Kim, Mingxi Chen, Wei De Wang, Poh Chong Lim, Jaewon Kim, Jianwei Chai, Mingsheng Zhang, Siew Lang Teo, Ming Lin, DongZhi Chi

Electrochemistry, Electronic, Optical and Magnetic Materials, Materials Chemistry

06 October 2022

Kim, J., Chen, M., Wang, W. D., Lim, P. C., Kim, J., Chai, J., Zhang, M., Teo, S. L., Lin, M., & Chi, D. (2022). Strong (110) Texturing and Heteroepitaxial Growth of Thin Mo Films on MoS2 Monolayer. ACS Applied Electronic Materials, 4(10), 5026–5033. https://doi.org/10.1021/acsaelm.2c01019

Growth of textured and low-resistivity metallic seed layers for AlN-based piezoelectric films is of high importance for bulk acoustic wave resonator applications. Through optimization of Mo physical vapor deposition parameters, namely, the Ar flow rate, strong (110) texturing and low electrical resistivities (∼3 × 10–7 Ω m) were observed for 43 ± 3 nm thick Mo films on a CVD-grown MoS2 monolayer on c-Al2O3(0001) substrates. The strong texturing was attributed to the growth template effect of the monolayer MoS2 due to the presence of a local epitaxial relationship between (110)-Mo and (0001)-MoS2 (i.e., through MoS2(0001)[112̅0]||Mo(110)[1̅11] and/or MoS2(0001)[112̅0]||Mo(110)[001]), coupled with an atomic-scale flatness of the MoS2 surface, which promotes layer-by-layer growth of the Mo film. The deposited Mo/MoS2 monolayer stack can also be easily peeled-off from the growth Al2O3(0001) substrate for possible subsequent transfers onto arbitrary substrates (e.g., SiO2/Si(001)) due to a weak van der Waals coupling at the MoS2 and Al2O3(0001) interface, facilitating vertical stacking strategies for monolithic integration of high quality and therefore high-performance, AlN-based piezoelectric devices and sensors on the Si platform.

Publisher Copyright

This research / project is supported by the National Research Foundation - Competitive Research Programme
Grant Reference no. : NRF-CRP24-2020-0002

This research is supported by core funding from: Science and Engineering Research Council
Grant Reference no. : SC25/20-8R1240-WP03

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see doi.org/10.1021/acsaelm.2c01019

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2637-6113

Institute of Materials Research and Engineering