Comprehensive Study of Thermal Impact on Warpage Behaviour of FOWLP with Different Die to Mold Ratio

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Comprehensive Study of Thermal Impact on Warpage Behaviour of FOWLP with Different Die to Mold Ratio
Title:
Comprehensive Study of Thermal Impact on Warpage Behaviour of FOWLP with Different Die to Mold Ratio
Journal Title:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
Publication Date:
10 August 2021
Citation:
Chong, S. C., Lim, S. S. B., Seit, W. W., Chai, T. C., & Sanchez, D. C. (2021). Comprehensive Study of Thermal Impact on Warpage Behaviour of FOWLP with Different Die to Mold Ratio. 2021 IEEE 71st Electronic Components and Technology Conference (ECTC). https://doi.org/10.1109/ectc32696.2021.00177
Abstract:
One of the challenges in processing Fan Out Wafer Level Package is the warpage of the Molded Wafer. Some of the fabrication processes such as lithography, coating, etching, and plating could not process wafer with high warpage. Therefore, the molded wafer should have as low a warpage magnitude as possible. In this paper, we study the warpage behavior of the molded wafer with different die to mold ratio. Further work is done on evaluating the impact of different chuck temperatures during the debonding process for the wafer with the highest warpage. The debonding process involved removing the molded wafer from the metal carriers, removing the thermal release tape from the molded wafer, and subjecting the molded wafer to series of thermal treatments to reduce the final warpage of the molded wafer.
License type:
Publisher Copyright
Funding Info:
There was no specific funding for the research done
Description:
© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works
ISSN:
2377-5726
ISBN:
978-1-6654-3120-0
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