| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 18 Feb 2026 | SERC | Institute of Microelectronics | Mechanistic insight and demonstration of antiferroelectric-gated enhancement-mode GaN HEMTs | Gerui Zheng, Hanjie Li, Hanlin Xie, Leming Jiao, Xudong Jia, Geok Ing Ng, Kai Ni, Zijie Zheng, Xiao Gong | Applied Physics Letters |
| 21 Oct 2024 | SERC | Institute of Microelectronics | AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets | Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng | IEEE Electron Device Letters |