| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 30 Mar 2026 | SERC | Institute of Microelectronics | GaN-on-Si HEMTs for Low Voltage FR2 Applications Enabled by Reactive-Sputtered n++-GaN Ohmic Contacts | Yihao Zhuang, Siyu Liu, Qingyun Xie, Hanlin Xie, Tomita Kazuyoshi, Tetsu Kachi, Hiroshi Amano, Subramaniam Arulkumaran, Geok Ing Ng | IEEE Electron Device Letters |