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25 May 2026 SERC Institute of Microelectronics Multimode GaN Transistors with Ultrawide Threshold Voltage Control Enabled by Passivation-Induced Stress–Strain–Polarization Coupling Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanchao Li, Hui Teng Tan, Hanlin Xie, Lifei Xi, Chris Boothroyd, Geok Ing Ng ACS Applied Materials & Interfaces
10 Mar 2026 SERC Institute of Microelectronics Inelastic-stress-induced threshold instability and mobility degradation in AlN/GaN MIS-HEMTs on Si Siyu Liu, Yihao Zhuang, Pengju Cui, Qingyun Xie, Hanlin Xie, Geok Ing Ng Applied Physics Letters
22 Jan 2026 SERC Institute of Microelectronics GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB) Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote, Marianne Germain, K. Radhakrishnan, Geok Ing Ng IEEE Electron Device Letters
10 Feb 2025 SERC Institute of Microelectronics Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng physica status solidi (a)