Strategic Mobility Engineering in 2D Semiconductor‐based FETs for Enhanced Electronic Devices

Strategic Mobility Engineering in 2D Semiconductor‐based FETs for Enhanced Electronic Devices

Advanced Science

10.1002/advs.202509170

https://doi.org/10.1002/advs.202509170

Sheila Sim, Sichao Li, Weifan Cai, Baiyu Yu, Xin Ju, Jing Cao, Zhaogang Dong, Xinmao Yin, Sunmi Shin, Yue Luo, DongZhi Chi, Ady Suwardi, Hong Kuan Ng, Jing Wu

17 September 2025

Sim, S., Li, S., Cai, W., Yu, B., Ju, X., Cao, J., Dong, Z., Yin, X., Shin, S., Luo, Y., Chi, D., Suwardi, A., Ng, H. K., Wu, J. (2025). Strategic Mobility Engineering in 2D Semiconductor‐based FETs for Enhanced Electronic Devices. Advanced Science, 12(40). Portico. https://doi.org/10.1002/advs.202509170

Abstract As silicon‐based electronics approach the physical limits of Moore's Law, 2‐Dimensional (2D) semiconductors emerge as promising candidates for next‐generation electronic devices due to their atomic‐scale thickness and inherently high carrier mobilities. These materials offer superior electrostatic control, mitigating short‐channel effects while enabling continued device scaling. However, challenges such as contact resistance and suboptimal channel properties continue to impede carrier transport, necessitating advanced mobility engineering strategies. This review comprehensively evaluates recent approaches to enhance carrier mobility in 2D semiconductor‐based field‐effect transistors (FETs), including doping, metal‐semiconductor interface optimization, effective mass engineering, scattering mechanism manipulation, work function tuning, and strain engineering. These strategies improve critical device parameters like current drive, subthreshold swing, and on/off ratios by optimizing carrier transport efficiency. By linking material‐level advancements to circuit‐level performance, this work underscores the pivotal role of mobility engineering in enabling scalable, high‐performance 2D electronics. These insights pave the way for transitioning 2D materials from laboratory research to practical applications, overcoming the limitations of conventional silicon technologies and driving innovations in high‐performance, energy‐efficient electronics.

Attribution 4.0 International (CC BY 4.0)

This research / project is supported by the A*STAR - RIE2025 MANUFACTURING, TRADE AND CONNECTIVITY (MTC) INDIVIDUAL RESEARCH GRANT & YOUNG INDIVIDUAL RESEARCH GRANT
Grant Reference no. : M24N8C0104

This is the peer reviewed version of the following article: Sim, S., Li, S., Cai, W., Yu, B., Ju, X., Cao, J., Dong, Z., Yin, X., Shin, S., Luo, Y., Chi, D., Suwardi, A., Ng, H. K., & Wu, J. (2025). Strategic Mobility Engineering in 2D Semiconductor‐based FETs for Enhanced Electronic Devices. Advanced Science, 12(40). Portico. https://doi.org/10.1002/advs.202509170 , which has been published in final form at https://doi.org/10.1002/advs.202509170. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

https://oar.a-star.edu.sg/communities-collections/articles/23188

2198-3844
2198-3844

Institute of Materials Research and Engineering

https://doi.org/10.1002/advs.202509170