Zhuang, Y., Ranjan, K., Xie, Q., Xie, H., Li, H., Wang, Y., Liu, S., & Ng, G. I. (2025). Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique. Physica Status Solidi (a). Portico. https://doi.org/10.1002/pssa.202500034
Abstract:
This work presents a novel application of the tristate pulse IV technique to investigate the back barrier (BB)‐associated trapping effects in high‐electron‐mobility transistors (HEMTs) fabricated on an AlN/GaN/AlGaN‐on‐Si epitaxial structure. By incorporating the distinct Pre‐state, this technique enables fast characterization of trap emission while minimizing self‐heating and fast‐activated trap influences, as well as the characterization of deep‐region traps in high‐frequency HEMTs without irreversible damage. Through varying the period and stress conditions of the Pre‐state, the origin of the current collapse is identified as traps located at the channel/BB interface with asymmetric fast capture and slow emission characteristics. The proposed application of the tristate pulse IV technique provides additional insights on trapping effect, reliability, and epitaxy, which are essential for improving high‐frequency power transistors.
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Funding Info:
This research / project is supported by the National Research Foundation, and Agency for Science, Technology and Research - RIE2025 Manufacturing, Trade, and Connectivity Industry Alignment Fund - Pre-Positioning
Grant Reference no. : M22L3a0112
This research / project is supported by the National Research Foundation - RIE2025 White Space Manufacturing, Trade, and Connectivity
Grant Reference no. : M23WSNG001
Description:
This is the peer reviewed version of the following article: Zhuang, Y., Ranjan, K., Xie, Q., Xie, H., Li, H., Wang, Y., Liu, S., & Ng, G. I. (2025). Trapping Effect in AlN/GaN/AlGaN High‐Electron‐Mobility Transistors Revealed by Tristate Pulse IV Technique. Physica Status Solidi (a). Portico, which has been published in final form at https://doi.org/10.1002/pssa.202500034. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.