| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 16 May 2024 | SERC | Institute of Microelectronics | First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding | Hanchao Li, Hanlin Xie, Yue Wang, Lekina Yulia, Kumud Ranjan, Navab Singh, Surasit Chung, Kenneth E. Lee, Subramaniam Arulkumaran, Geok Ing Ng | physica status solidi (a) |