| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 22 Jan 2026 | SERC | Institute of Microelectronics | GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60%) and Low Noise (<1.2 dB) | Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Stefan Degroote, Marianne Germain, K. Radhakrishnan, Geok Ing Ng | IEEE Electron Device Letters |