Scandium-doped aluminum nitride photonic integration platform

Scandium-doped aluminum nitride photonic integration platform

SPIE Photonics West 2024

10.1117/12.3004598

https://doi.org/10.1117/12.3004598

Nanxi Li, Wing Wai Chung, Jia Sheng Goh, Yat Fung Tsang, Landobasa Y. M. Tobing, Chong Pei Ho, Binni Varghese, Leh Woon Lim, Minghua Li, Huamao Lin, Qingxin Zhang, Doris K. T. Ng, Lennon Y. T. Lee, Xianshu Luo

12 March 2024

Li, N., Chung, W. W., Goh, J. S., Tsang, Y. F., Tobing, L. Y. M., Ho, C. P., Varghese, B., Lim, L. W., Li, M., Lin, H., Zhang, Q., Ng, D. K. T., Lee, L. Y. T., & Luo, X. (2024). Scandium-doped aluminum nitride photonic integration platform. In S. M. García-Blanco & P. Cheben (Eds.), Integrated Optics: Devices, Materials, and Technologies XXVIII (p. 42). SPIE. https://doi.org/10.1117/12.3004598

Aluminum nitride (AlN) is a promising photonics material contributed by its wide transparency window and remarkable nonlinear optical property. Moreover, its nonlinear effect can be further enhanced by doping Scandium (Sc). Such nonlinear optical property brings potential for high efficiency in nonlinear optical generation processes, such as 2nd harmonic generation and frequency comb generation. Although the nonlinear optical property of Sc-doped AlN looks promising, its waveguide is facing challenge on loss reduction. In this work, we report Sc-doped AlN photonic integrated circuit with reduced waveguide loss of 6 dB/cm around 1550 nm. The waveguide has Sc doping concentration of 10%. Its etching process is tailored through a design of experiment (DoE) approach to achieve smooth surface. An annealing process is also applied to patterned waveguide for optical loss reduction. A loaded Q of 1.41×10^4 has also been reported from microring resonator on the same wafer. The reported result paves the way towards low-loss Sc-doped AlN for photonic integrated circuits.

Publisher Copyright

This research is supported by core funding from: Science and Engineering Research Council Central Funds - Council Strategic Fund
Grant Reference no. : C220415015

Copyright 2024 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.

https://oar.a-star.edu.sg/communities-collections/articles/21559

https://doi.org/10.1117/12.3004598

Institute of Microelectronics