Wafer Level Fabrication of Embedded Silicon Microcooler on Heating Devices

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Wafer Level Fabrication of Embedded Silicon Microcooler on Heating Devices
Title:
Wafer Level Fabrication of Embedded Silicon Microcooler on Heating Devices
Journal Title:
2023 IEEE 25th Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
18 March 2024
Citation:
Long, L. B., Ong, J., Au, J., Chinq, J. M., Xiaowu, Z., & Huicheng, F. (2023, December 5). Wafer Level Fabrication of Embedded Silicon Microcooler on Heating Devices. 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc59621.2023.10457612
Abstract:
The demand for cooling performance on microelectronics package is in increasing trend due to the complexity of multi- chips packaging design and enhanced chips performances. This paper demonstrated the wafer level fabrication of embedded silicon heat sink and silicon-based liquid microchannel on metallic heating and sensing device. This thermal management solutions was designed to achieve high heat dissipation. 3.6um thick of metallic heater and sensor was used to deliver high power flow and direct embedded liquid cooling channel was fabricated at the opposite site of heating devices. Wafer level fabrication process integration flow was established. Process feasibility challenges issues and defectivities incurred were addressed. The respective solutions or process parameters optimization were discussed in this paper.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Embedded Two-Phase Liquid Cooling on 3D Ics
Grant Reference no. : C210415009
Description:
© 2024 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
979-8-3503-2957-5
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