Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film

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Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film
Title:
Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film
Journal Title:
2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)
Keywords:
Publication Date:
29 September 2023
Citation:
Chen, L., Wang, Z., Liu, C., Li, M., Song, W., Wang, W., Varghese, B., Lee, H. K., Lin, H., & Zhu, Y. (2023, July 23). Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265450
Abstract:
The remarkable ferroelectric properties discovered in scandium-doped aluminum nitride (AlScN) has generated tremendous research interest. Preliminary investigations indicate that the Al 1-x Sc x N could encounter substantial leakage current when scales down the thickness, potentially limiting its practical implementation on memory applications. In this work, taking the 50 nm and 30 nm ultra-thin Al 0.7 Sc 0.3 N films as vehicle, we systematically analyzed the key factor contributing the leakage current via Poole-Frenkel (P-F) emission fitting. The result shows that it is the defect concentration leading to the large leakage instead of the trap energy level (Φ T ).
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing (WP06)
Grant Reference no. : A20G9b0135
Description:
© 2023 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
2375-0448
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