| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 7 Jun 2026 | SERC | Institute of Microelectronics | Fully Al-based 0.25 μm 20 V GaN-on-Si Process with 3 W/mm for FR3 | Hsien Shun Wu, Yuan Gao, Qingyun Xie, Yi Heng Leong, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng | 2026 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) |
| 6 May 2026 | SERC | Institute of Microelectronics | CMOS-Compatible 200 mm 0.25 µm GaN-on-Si HEMT Process for FR3 Application | Qingyun Xie, Yuan Gao, Hsien-Shun Wu, Yi Heng Leong, Hanlin Xie, Haorui Luo, Hui Teng Tan, Zhan Jiang Quek, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng | 2026 10th IEEE Electron Devices Technology and Manufacturing Conference (EDTM) |