Ultrathin Hafnium Oxide Integration for Two-Dimensional Functional Electronic Devices

Ultrathin Hafnium Oxide Integration for Two-Dimensional Functional Electronic Devices

ACS Applied Materials & Interfaces

10.1021/acsami.5c24248

https://doi.org/10.1021/acsami.5c24248

Jingyu Mao, Xiangyu Hou, Wei Zhang, Yichen Cai, Yizhuo Luo, Siew Lang Teo, Jinlong Zhu, Junhao Lin, Ming Lin, Jingsheng Chen, Wei Chen

hafnium oxide, high-κ dielectrics, van der Waals integration, 2D transistors, resistive switching

23 January 2026

Mao, J., Hou, X., Zhang, W., Cai, Y., Luo, Y., Teo, S. L., Zhu, J., Lin, J., Lin, M., Chen, J., & Chen, W. (2026). Ultrathin Hafnium Oxide Integration for Two-Dimensional Functional Electronic Devices. ACS Applied Materials & Interfaces, 18(4), 7159–7168. https://doi.org/10.1021/acsami.5c24248

Two-dimensional (2D) materials are considered promising candidates for next-generation electronic devices, especially field-effect transistors (FETs). However, deposition of a uniform dielectric layer on 2D materials with an inert surface is challenging. Herein, the integration of HfOx on graphene is demonstrated through simple thermal oxidation of HfS2 precursor to form a high-quality HfOx/graphene stack. The thermal treatment enables complete conversion from HfS2 into ultrathin HfOx with an atomically smooth surface and sharp interface with graphene. The transformed thin HfOx shows decent dielectric properties, including a high dielectric constant of 18 and a robust breakdown field of 10 MV/cm. High-performance MoS2 FETs based on HfOx/graphene gate stack demonstrate a high ON/OFF ratio of 106, a low subthreshold swing of 75 mV/dec, and a low leakage current. Resistive switching devices were also fabricated showing coexistence of volatile and nonvolatile switching, and a steep switching slope. This nondestructive integration of high-quality high-κ dielectrics on 2D materials opens up possibilities for developing multifunctional 2D electronics.

Publisher Copyright

This research / project is supported by the Natural Science Foundation of China - 62274118
Grant Reference no. : NA

This research / project is supported by the Singapore National Research Foundation - National Research Foundation Investigatorship Program
Grant Reference no. : NRFI08-2022-0009

This research / project is supported by the SUSTech-NUS Joint Research Program - NA
Grant Reference no. : NA

This research / project is supported by the Research Launch Project of Shenzhen University of Information Technology - SUIT2025KJ002
Grant Reference no. : NA

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see 10.1021/acsami.5c24248.

https://oar.a-star.edu.sg/communities-collections/articles/23141

1944-8244
1944-8252

Institute of Materials Research and Engineering