Optical loss characterization and analysis of wafer-scale scandium-doped AlN photonic devices

Optical loss characterization and analysis of wafer-scale scandium-doped AlN photonic devices

Integrated Optics: Devices, Materials, and Technologies XXX

10.1117/12.3079875

https://doi.org/10.1117/12.3079875

Yangyang Zhuge, Wing Wai Chung, Yanmei Cao, Minghua Li, Yat Fung Tsang, Yeow Teck Toh, Steven Hou Jang Lee, Huamao Lin, Landobasa Y. M. Tobing, Chong Pei Ho, Xianshu Luo, Chengkuo Lee, Nanxi Li

04 March 2026

Zhuge, Y., Chung, W. W., Cao, Y., Li, M., Tsang, Y. F., Toh, Y. T., Lee, S. H. J., Lin, H., Tobing, L. Y. M., Ho, C. P., Luo, X., Lee, C., & Li, N. (2026). Optical loss characterization and analysis of wafer-scale scandium-doped AlN photonic devices. In S. M. García-Blanco & P. Cheben (Editors), Integrated Optics: Devices, Materials, and Technologies XXX. https://doi.org/10.1117/12.3079875

Scandium-doped aluminum nitride (ScAlN) is a promising material for CMOS-compatible photonic platforms due to its improved material properties and compatibility with wafer-scale processes. In this work, we report the optical loss characteristics of 10% ScAlN thin films deposited via co-sputtering on 8-inch wafers. In addition to device-level characterization, the material properties of the ScAlN films are systematically examined, including top surface roughness measured by atomic force microscopy and optical constants extracted from spectroscopic ellipsometry. Propagation losses are extracted from microring resonators with varying waveguide dimensions, showing a clear trend of increasing loss with larger waveguide width and thickness. This behavior is primarily attributed to increased optical absorption due to mode confinement and variations in material quality. Wafer-level measurements further reveal that waveguides located near the wafer edge exhibit lower losses than those at the center, suggesting improved crystallinity and reduced defect density at the periphery. These results highlight the potential of ScAlN for low-loss, scalable photonic integration.

Publisher Copyright

This research / project is supported by the Agency for Science, Technology and Research - Chip-scale Multispectral 3D Scanner (CMUS)
Grant Reference no. : M23M5a0069

This research / project is supported by the Agency for Science, Technology and Research - On-chip Mode-Locked Lasers using Heterogeneous Integration of Graphene for Scalable Manufacturing
Grant Reference no. : M23M6c0109

This research / project is supported by the National Research Foundation (NRF) - Competitive Research Programme - CMOS Photonics Platform for Next Generation Photonics AI Engines
Grant Reference no. : NRF-F-CRP-2024-0006

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https://oar.a-star.edu.sg/communities-collections/articles/23126

https://doi.org/10.1117/12.3079875

Institute of Microelectronics