Mutable Polarization Switching Characteristics in Wurtzite Al1-xScxN Ferroelectric Films Enabled by Sc-Doping

Mutable Polarization Switching Characteristics in Wurtzite Al1-xScxN Ferroelectric Films Enabled by Sc-Doping

Small

10.1002/smll.202502865

https://doi.org/10.1002/smll.202502865

Youdi Gu, Shu Shi, Hanxin Su, Geng Huangfu, Lanxin Jia, Siqin Li, Kaixuan Sun, Yichen Wu, Tao Zeng, Siewlang Teo, Ming Lin, Yao Zhu, Han Wang, Jingsheng Chen

Electrical and Electronic Engineering, ferroelectric, aluminum scandium nitrides

01 July 2025

Gu, Y., Shi, S., Su, H., Huangfu, G., Jia, L., Li, S., Sun, K., Wu, Y., Zeng, T., Teo, S., Lin, M., Zhu, Y., Wang, H., & Chen, J. (2025). Mutable Polarization Switching Characteristics in Wurtzite Al1‐xScxN Ferroelectric Films Enabled by Sc‐Doping. Small, 21(34). Portico. https://doi.org/10.1002/smll.202502865

Wurtzite ferroelectric aluminum scandium nitrides (Al1–xScxN) are highly appealing for their large remanent polarization, steep hysteresis, and easy integration with multiple mainstream semiconductor platforms. However, their applications are constrained by the inherently high coercive field (Ec), desperately needing comprehensive research of polarization switching for potentially lowering Ec. In particular, the correlations between polarization switching mechanisms and Sc doping levels remain underexplored. Here, the polarization switching kinetics in wurtzite ferroelectric Al1–xScxN (x = 0.25–0.3) subjected to varied voltage amplitudes and pulse durations are investigated, revealing a mutable polarization switching. The Al0.75Sc0.25N sample displays uniform switching behavior described by the Kolmogorov‐Avrami‐Ishibashi (KAI) model, while the intermediate composition Al0.725Sc0.275N exhibits an ambiguous switching mechanism, more aligned with KAI model‐based on mathematical fitting validation. Especially, Al0.7Sc0.3N with obviously reduced coercive and activation fields, exhibits a nucleation‐limited‐switching (NLS) mechanism. It is found that higher‐level Sc doping generates more nucleation sites, reducing energy barriers and accelerating nucleation switching, driving the transition from KAI to NLS. Energetic analysis further elucidates the doping‐induced crossover of switching mechanisms. These results provide new insight into the fundamental understanding of polarization switching in wurtzite ferroelectric nitrides, which is critical for realizing their optimal and reliable applications.

Publisher Copyright

This research / project is supported by the A*STAR - RIE2020, Advanced Manufacturing and Engineering (AME) Programmatic Grant
Grant Reference no. : A20G9b0135

This research / project is supported by the Ministry of Education MOE - Academic Research Fund Tier 2
Grant Reference no. : T2EP50121-0011

This research / project is supported by the Ministry of Education MOE - Academic Research Fund Tier 1
Grant Reference no. : 22-4888- A0001

This is the peer reviewed version of the following article: Gu, Y., Shi, S., Su, H., Huangfu, G., Jia, L., Li, S., Sun, K., Wu, Y., Zeng, T., Teo, S., Lin, M., Zhu, Y., Wang, H., & Chen, J. (2025). Mutable Polarization Switching Characteristics in Wurtzite Al1‐xScxN Ferroelectric Films Enabled by Sc‐Doping. Small, 21(34). Portico. https://doi.org/10.1002/smll.202502865 , which has been published in final form at v. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

https://oar.a-star.edu.sg/communities-collections/articles/22673

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Institute of Materials Research and Engineering