Oxidation of sputtered AlScN films exposed to the atmosphere

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Oxidation of sputtered AlScN films exposed to the atmosphere
Title:
Oxidation of sputtered AlScN films exposed to the atmosphere
Journal Title:
2022 IEEE International Ultrasonics Symposium (IUS)
Keywords:
Publication Date:
01 December 2022
Citation:
Li, M., Hu, K., Lin, H., Felmetsger, V., & Zhu, Y. (2022). Oxidation of sputtered AlScN films exposed to the atmosphere. 2022 IEEE International Ultrasonics Symposium (IUS), 1–3. https://doi.org/10.1109/ius54386.2022.9957694
Abstract:
1 µm thick highly c-axis textured Al0.8Sc0.2N films were fabricated using Pulsed DC reactive magnetron sputtering. The as-deposited films were exposed to the atmosphere for about one month before characterization. X-ray photoelectron spectroscopy (XPS) and Transmission Electron Microscopy (TEM) revealed the formation of an oxide overlayer on AlScN film surface, which directly contacted to air. Reaction controlled process was responsible for this self-limited oxidation. In AlScN film with small grains and big portion of grain boundary, oxygen was also detected at the grain boundaries in bulk film. The oxidation reaction modulates AlScN film composition and surface structure, which would pose additional challenges for the AlScN-based device design and integration
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Science and Engineering Research Council of A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing
Grant Reference no. : A20G9b0135
Description:
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
1948-5727
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