Sorkin, V., Zhou, H., Yu, Z. G., Ang, K.-W., & Zhang, Y.-W. (2025). Impact of grain boundaries on the electronic properties and Schottky barrier height in MoS2@Au heterojunctions. Physical Chemistry Chemical Physics, 27(2), 905–914. https://doi.org/10.1039/d4cp03686g
Abstract:
This work explores GB impact on MoS2@Au SBH. DFT shows GBs significantly reduce SBH in defect-free MoS2. Our findings emphasize the importance of GB control for high-performance MoS2-based neuromorphic devices.
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Funding Info:
This research / project is supported by the National Research Foundation, Singapore - Competitive Research Programme
Grant Reference no. : NRF-CRP24-2020-0002
This research / project is supported by the Agency for Science, Technology and Research, Science and Engineering Research Council - Central Research Fund
Grant Reference no. :