Search results

Publication date Communities Collections Article title Author(s) Journal/Conference
22 Apr 2024 SERC Institute of High Performance Computing  An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions Viacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, Kah-Wee Ang, Yong-Wei Zhang ACS Applied Materials & Interfaces
17 Apr 2023 SERC Institute of High Performance Computing  Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor Hangbo Zhou, Viacheslav Sorkin, Shuai Chen, Zhigen Yu, Kah‐Wee Ang, Yong‐Wei Zhang Advanced Electronic Materials
26 Oct 2022 SERC Institute of High Performance Computing  The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study Viacheslav Sorkin, Hangbo Zhou, Zhi Gen Yu, Kah-Wee Ang, Yong-Wei Zhang Scientific Reports
23 Mar 2016 SERC Institute of High Performance Computing  Effect of Surface Chemistry on the Mechanisms and Governing Laws of Friction and Wear Ling Dai, Viacheslav Sorkin, Yong-Wei Zhang ACS Applied Materials & Interfaces