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22 Apr 2024
SERC
Institute of High Performance Computing
An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions
Viacheslav Sorkin,
Hangbo Zhou,
Zhi Gen Yu,
Kah-Wee Ang,
Yong-Wei Zhang
ACS Applied Materials & Interfaces
17 Apr 2023
SERC
Institute of High Performance Computing
Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor
Hangbo Zhou,
Viacheslav Sorkin,
Shuai Chen,
Zhigen Yu,
Kah‐Wee Ang,
Yong‐Wei Zhang
Advanced Electronic Materials
26 Oct 2022
SERC
Institute of High Performance Computing
The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS2 heterojunction: a first-principles study
Viacheslav Sorkin,
Hangbo Zhou,
Zhi Gen Yu,
Kah-Wee Ang,
Yong-Wei Zhang
Scientific Reports
23 Mar 2016
SERC
Institute of High Performance Computing
Effect of Surface Chemistry on the Mechanisms and Governing Laws of Friction and Wear
Ling Dai,
Viacheslav Sorkin,
Yong-Wei Zhang
ACS Applied Materials & Interfaces
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