Kim, J., Tong, S. W., Chen, M., Zhang, M., Lim, P. C., Chai, J., Teo, S. L., Lin, M., & Chi, D. (2024). Strong texturing and van der Waals transferability of Mo/Al0.65Sc0.35N/Mo films on 2D-MoS2 monolayers. Applied Physics Letters, 125(24). https://doi.org/10.1063/5.0241763
Abstract:
Van der Waals epitaxy and transfer of functional layers are crucial technologies for achieving monolithic 3D integration in advanced electronics. Two-dimensional transition metal dichalcogenides, such as 2D-MoS2, exhibit strong growth texturing effects and excellent van der Waals transferability for metal and semiconductor layers deposited on top of them. In this study, we demonstrate strong texturing and layer transferability of piezoelectric Al0.65Sc0.35N layers when utilizing Mo seed layers on 2D-MoS2. With the presence of 2D-MoS2, we achieve textured growth of Al0.65Sc0.35N layers with thinner seed layers and lower piezoelectric thicknesses. Furthermore, these deposited stacks can be easily peeled off from their growth substrates through conventional layer transfer techniques, making them highly suitable for vertical integration of functional layers.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the National Research Foundation - Competitive Research Programme
Grant Reference no. : NRF-CRP24-2020-0002
This research / project is supported by the Agency for Science, Technology and Research, Science and Engineering Research Council - C-IoT and AlScN programmes
Grant Reference no. : SC25/21-7078D1, SC25/20-8R1240-WP03
Description:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J.-Y. Kim et al., Appl. Phys. Lett. 125, 243102 (2024) and may be found at https://doi.org/10.1063/5.0241763.