Model-based optical proximity correction for immersion lithography-based flat optics platform

Page view(s)
21
Checked on Nov 08, 2024
Model-based optical proximity correction for immersion lithography-based flat optics platform
Title:
Model-based optical proximity correction for immersion lithography-based flat optics platform
Journal Title:
High Contrast Metastructures XII
Keywords:
Publication Date:
15 March 2023
Citation:
Choi, N., Lai, K. H., Sundaram, A., Singh, N., Fu, Y. H., & Lee, L. Y. T. (2023). Model-based optical proximity correction for immersion lithography-based flat optics platform. In J. A. Fan, C. J. Chang-Hasnain, & W. Zhou (Eds.), High Contrast Metastructures XII. SPIE. https://doi.org/10.1117/12.2647686
Abstract:
We introduce well-developed optical proximity correction (OPC) techniques to the metasurface-based flat optics manufacturing process. Flat optics, formed by subwavelength scale nanostructure pillar (nanopillar) array, so called metasurface, has become promising substitutes for conventional bulky optical components. For its manufacturing, photolithography is preferable rather than the electron beam lithography (EBL) technique because of its time and cost effectiveness for mass manufacturing. However, the required feature size and pitch of the metasurface for the visible light is approaching the process limit of the ArF immersion lithography. It results in critical dimension (CD) errors due to optical proximity effect and could result in efficiency degradation of the flat optics. In the semiconductor manufacturing industry, OPC based on process modelling and numerical computation has been developed for the last few decades to control the CD on the wafer. Here, a machine learning (ML) model is constructed to avoid the time consumption of the conventional OPC method without losing the accuracy. Various pitches of flat optics metalens, from 465 nm to 160 nm, has been studied for the implementation of the ML OPC. The root mean square (RMS) CD errors < 1 nm and the CD accuracies < 6 nm can be achieved. The CD error percentages over the pillar diameters < 6 % is observed and the improvement of CD error and CD accuracy compared to rule based OPC in small pitches of metalens is demonstrated.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - RIE2020 Advanced Manufacturing and Engineering (AME) Programmatic Grant
Grant Reference no. : A18A7b0058

This research / project is supported by the A*STAR - Advanced Manufacturing and Engineering (AME) Individual Research Grant (IRG)
Grant Reference no. : A2083c0060
Description:
Copyright 2023 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited.
ISSN:
NA
Files uploaded:

File Size Format Action
post-print-model-based-optical-proximity-correction-for-immersion-lithographybased.pdf 380.55 KB PDF Request a copy