High Density Redistribution Layers (< 2 µm L/S) for Chiplets Packaging

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High Density Redistribution Layers (< 2 µm L/S) for Chiplets Packaging
Title:
High Density Redistribution Layers (< 2 µm L/S) for Chiplets Packaging
Journal Title:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
05 January 2022
Citation:
Ho, S. W., Kanna, C. V., Chinq, J. M., & Chong, C. T. (2021). High Density Redistribution Layers (< 2 µm L/S) for Chiplets Packaging. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663962
Abstract:
Increased demand for chiplets-based designs in advanced packages for leading applications like artificial intelligence and high power computing is driving the need for finer Cu distribution layers to meet their package I/O density and bandwidth performance requirements. In this paper, we demonstrate the feasibility of SAP method for 0.8 and 1μm Cu redistribution lines on multi-layer RDL. Electrical test results on meander comb lines and daisy chains structure show good connectivity for fine-pitch and high-density Cu RDL for chiplets packaging.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the A*STAR - IPP-IAF - Fan-Out Wafer-Level-Packaging (FO-WLP) Development Line
Grant Reference no. : 1528100051
Description:
© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN:
978-1-6654-1619-1
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