Cao, J., Shi, S., Zhu, Y., & Chen, J. (2021). An Overview of Ferroelectric Hafnia and Epitaxial Growth. Physica Status Solidi (RRL) – Rapid Research Letters, 15(5), 2100025. Portico. https://doi.org/10.1002/pssr.202100025
Abstract:
Hafnia thin films have been under intensive research during the past few years due to its robust ferroelectricity under very thin limit and good compatibility with silicon. The polar crystal structure critical to ferroelectricity in hafnia thin films is metastable, and is generally obtained in polycrystalline thin films, coexisting with other nonpolar phases. Recently, much attention has been focused on epitaxial ferroelectric hafnia thin films to get rid of the nonpolar phases, to investigate the more intrinsic factors to ferroelectricity, and its potential applications. Herein, recent progress on the growth of epitaxial hafnia thin films is reviewed. The epitaxial growth mechanism is explored, in particular, the interface matching, phase stability under temperature and oxygen pressure, followed by discussions on thickness dependency of ferroelectricity, and wake-up effect in hafnia. Finally, an outlook on ferroelectric hafnia both on fundamental studies and future applications is discussed.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Agency for Science, Technology and Research - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Films and Devices for mm-Wave and Edge Computing
Grant Reference no. : A20G9b0135
This research / project is supported by the Ministry of Education - Tier1
Grant Reference no. : R-284-000-195-114
Description:
This is the peer reviewed version of the following article: Cao, J., Shi, S., Zhu, Y., & Chen, J. (2021). An Overview of Ferroelectric Hafnia and Epitaxial Growth. Physica Status Solidi (RRL) – Rapid Research Letters, 15(5), 2100025. Portico. https://doi.org/10.1002/pssr.202100025, which has been published in final form at doi.org/10.1002/pssr.202100025. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited."