Development of Metallization Process for Fine Pitch TSV

Development of Metallization Process for Fine Pitch TSV

2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC)

10.1109/EPTC53413.2021.9663932

http://dx.doi.org/10.1109/eptc53413.2021.9663932

Gilho Hwang, Ji Hong Miao, B.S.S Chandra Rao

05 January 2022

Hwang, G., Miao, J. H., & Rao, B. S. S. C. (2021). Development of Metallization Process for Fine Pitch TSV. 2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc53413.2021.9663932

Defect-free TSV fabrication process for Cu filling of 1.0μm and 1.5μm diameters with an aspect ratio of 7 and 6 is studied. To improve barrier/seed layer step coverage, TSV profile with scallop free with slight taper was developed, and an electroplating process was for solid TSV Cu filling. Defect-free TSV filling can be achieved for TSV with 1.0μm and 1.5μm diameters.

Publisher Copyright

This research is supported by core funding from: Institute of Microelectronics
Grant Reference no. : N.A.

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Institute of Microelectronics