TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio

TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio

IEEE Photonics Technology Letters

10.1109/LPT.2016.2514528

http://dx.doi.org/10.1109/lpt.2016.2514528

Zifeng Zhang, Lai Mun Wong, Zhengyun Wu, Zhiyuan Yan, Shijie Wang, DongZhi Chi, Rongdun Hong, Weifeng Yang

Electrical and Electronic Engineering, General Materials Science

05 January 2016

Zhang, Z., Wong, L. M., Wu, Z., Yan, Z., Wang, S., Chi, D., … Yang, W. (2016). TiNbO2-Based Photodetectors With Low Dark Current and High UV-to-Visible Rejection Ratio. IEEE Photonics Technology Letters, 28(8), 837–840. doi:10.1109/lpt.2016.2514528

We reported on metal-semiconductor-metal ultraviolet (UV) photodetector (PD) based on pulse-laser-deposited TiNbO 2 alloy film. The TiNbO 2 PD exhibited a low dark current density of ~0.46 nA/cm 2 , a high UV-to-visible rejection ratio of ~10 6 , and a high responsivity of ~0.22 A/W under the illumination of 310-nm light (~1.86 mW/cm 2 ). Interestingly, the TiNbO 2 alloy PD presents a blue-shift cutoff wavelength of 350 nm due to quantum size effect and alloy characteristics, which would be promising for the further research in the UV detection.

Publisher Copyright

This research / project is supported by the National Natural Science Foundation of China - National Natural Science Foundation of China
Grant Reference no. : 61176049

This research / project is supported by the Natural Science Foundation for Young Scholars of China - Natural Science Foundation for Young Scholars of China
Grant Reference no. : 61307047

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