| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 18 Mar 2025 | SERC | Institute of Microelectronics | Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures | Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng | Applied Physics Letters |
| 22 Jun 2024 | SERC | Institute of Microelectronics | Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes | Pradip Dalapati, Subramaniam Arulkumaran, Dinesh Mani, Hanchao Li, Hanlin Xie, Yue Wang, Geok Ing Ng | Materials Science and Engineering: B |