| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 7 Jun 2026 | SERC | Institute of Microelectronics | Fully Al-based 0.25 μm 20 V GaN-on-Si Process with 3 W/mm for FR3 | Hsien Shun Wu, Yuan Gao, Qingyun Xie, Yi Heng Leong, Wee Leng Ong, Lakshmi Kanta Bera, Navab Singh, Geok Ing Ng | 2026 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) |