Low Thermal Budget Fine-pitch Cu/Dielectric Hybrid Bonding with Cu Microstructure Modifications

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Low Thermal Budget Fine-pitch Cu/Dielectric Hybrid Bonding with Cu Microstructure Modifications
Title:
Low Thermal Budget Fine-pitch Cu/Dielectric Hybrid Bonding with Cu Microstructure Modifications
Journal Title:
2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
Keywords:
Publication Date:
26 June 2024
Citation:
Cheemalamarri, H. K., Van Nhat Anh, T., Guan, C. G., Lim, M. K., Vempati, S. R., & Singh, N. (2024). Low Thermal Budget Fine-pitch Cu/Dielectric Hybrid Bonding with Cu Microstructure Modifications. 2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 1880–1884. https://doi.org/10.1109/ectc51529.2024.00315
Abstract:
Advanced packaging featuring vertical integration has emerged as a crucial technology facilitating high performance, low power consumption, and compatibility for heterogeneous integration. Metal/dielectric hybrid bonding stands out as a pivotal technique enabling the vertical stacking of multifunctional components. However, certain applications, such as memory stacking, demand specific low-thermal budget processing. Although new dielectrics like SiCN are promising for reducing the thermal budget of dielectric-to-dielectric bonding interfaces, the formation of metal/Cu-Cu interconnects requires a higher thermal budget. Consequently, the overall thermal budget for Cu/dielectric hybrid bonding exceeds 350 °C. This paper aims to achieve Cu/dielectric bonding at a lower thermal budget of ≤250 °C. This goal is accomplished by modifying the Cu microstructure through grain size variation employing the modifications into the conventional damascene process flow or with a combination of both. Systematic investigations in Cu dishing, by comparing the proposed methods to the conventional damascene flow reveal no variations with the chemical mechanical planarization (CMP) process. Furthermore, grain modifications with high <111> oriented Cu were investigated by altering the plating parameters without special chemistry or by using an alternate deposition method. The scanning electron microscopy-electron backscatter diffraction (SEM-EBSD) is utilized for understanding the Cu microstructure modifications. Interface characterization demonstrates significant enhancement in bonding interface grain growth with our proposed methods, leading to low thermal budget Cu/dielectric hybrid bonding.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the Agency for Science, Technology and Research - Centre of Excellence in Advanced Packaging 3.0
Grant Reference no. : I2101E0008
Description:
© 2024 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
2377-5726
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