Thermoelectric performance enhancement of Mg2Si-based silicides synthesized in nitrogen atmosphere

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Thermoelectric performance enhancement of Mg2Si-based silicides synthesized in nitrogen atmosphere
Title:
Thermoelectric performance enhancement of Mg2Si-based silicides synthesized in nitrogen atmosphere
Journal Title:
Materials Research Express
Keywords:
Publication Date:
10 December 2024
Citation:
Jianghua Li, Xiaopu Li, Bowen Cai, Chen Chen, Qian Zhang, Zhisheng Zhao, Long Zhang, Fengrong Yu, Dongli Yu, Yongjun Tian, Bo Xu, Enhanced thermoelectric performance of high pressure synthesized Sb-doped Mg2Si, Journal of Alloys and Compounds, Volume 741, 2018, Pages 1148-1152, ISSN 0925-8388, https://doi.org/10.1016/j.jallcom.2018.01.260.
Abstract:
In this work, we compare the thermoelectric performance of Mg2Si-based compounds by synthesizing them in N2 compared to Ar atmosphere during ball milling. In addition, we achieved high thermoelectric performance by introducing Sn-alloying as well as Zn- and Bi-co doping. The high performance originated from simultaneous improvement in electrical conductivity and reduced thermal conductivity. This results in peak zT near 1.0 at 760 K for Mg1.9925Zn0.0075Si0.48Sn0.5Bi0.02. Owing to the much lower cost (higher abundance) of N2 compared to Ar owing to their much higher relative abundance, such processing strategy is expected to improve sustainability. Furthermore, the insights derived from this work can potentially be applied to other compounds containing Mg- and other reactive elements. Fundamentally, this result will also motivate further studies on the intrinsic defect formation in N2 vs Ar atmosphere, which affects both electronic and thermal transports.
License type:
Attribution 4.0 International (CC BY 4.0)
Funding Info:
This research / project is supported by the Agency for Science, Technology and Research - e-Asia Joint Research Program
Grant Reference no. : R22I1IR053

This research / project is supported by the National Research Foundation - Low Carbon Energy Research (LCER) Phase 2 Emerging Technology Grant Call (ETGC)
Grant Reference no. : U2411D4011
Description:
ISSN:
2053-1591
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