1 Million Intrinsic Q-Factor Microring Resonators From PVD Aluminum Nitride on SiO2-on-Si Substrate

1 Million Intrinsic Q-Factor Microring Resonators From PVD Aluminum Nitride on SiO2-on-Si Substrate

Optical Fiber Communication Conference (OFC) 2024

10.1364/OFC.2024.Tu2B.4

https://doi.org/10.1364/ofc.2024.tu2b.4

Amy S. K. Tong, Wing Wai Chung, Charmaine Goh, Landobasa Y. M. Tobing, Leh Woon Lim, Yuriy A. Akimov, Zhan Jiang Quek, Aravind P. Anthur, Jia Sheng Goh, Huamao Lin, Navab Singh, Qingxin Zhang, Doris K. T. Ng

14 May 2024

Tong, A. S. K., Chung, W. W., Goh, C., Tobing, L. Y. M., Lim, L. W., Akimov, Y. A., Quek, Z. J., Anthur, A. P., Goh, J. S., Lin, H., Singh, N., Zhang, Q., & Ng, D. K. T. (2024). 1 Million Intrinsic Q-Factor Microring Resonators From PVD Aluminum Nitride on SiO2-on-Si Substrate. Optical Fiber Communication Conference (OFC) 2024, Tu2B.4. https://doi.org/10.1364/ofc.2024.tu2b.4

We present PVD AlN microring resonators on SiO2-on-Si substrate with intrinsic Q-factor >1 million at C-band. To the best of our knowledge, this is the highest intrinsic Q-factor reported for PVD AlN on SiO2-on-Si substrate.

Publisher Copyright

This research / project is supported by the A*STAR - NA
Grant Reference no. : C210917001

This research / project is supported by the A*STAR - Lightning
Grant Reference no. : C220415015 (#21709)

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https://oar.a-star.edu.sg/communities-collections/articles/21482

978-1-957171-32-6

Institute of Microelectronics