Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing

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Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing
Title:
Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing
Journal Title:
Chemical Engineering Journal
Keywords:
Publication Date:
11 September 2024
Citation:
Zhang, H., Li, J., Ju, X., Jiang, J., Wu, J., Chi, D., Ang, D. S., Hu, W., Wei, R., Zhu, M., Lu, X. (2024). Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing. Chemical Engineering Journal, 498, 155651. https://doi.org/10.1016/j.cej.2024.155651
Abstract:
Significant advancements in artificial neural networks (ANNs) have driven the rapid progress of artificial intelligence and machine learning. While current feedforward neural networks primarily handle static data, recurrent neural networks (RNNs) are designed for dynamical systems. However, RNNs demand extensive training on specific tasks, limiting their scalability and affordability for edge computing. Physical reservoir computing (RC) offers an alternative approach by mapping inputs into high-dimensional states, allowing for pattern analysis within a fixed reservoir. Unlike RNNs, RC is well-suited for temporal and sequential data processing with rapid speed and low training costs. This makes RC suitable for hardware implementation across various research domains. Nonetheless, existing demonstrations of RC remain constrained to small-scale device arrays. As electronic synapse arrays aim to approach very large-scale and highly complex hardware as in the human brain, managing heat dissipation becomes a formidable challenge. In this work, we successfully developed the neuristors based on textured h-BN films, prepared using a CMOS-compatible technique, and constructed a physical RC system based on as-fabricated devices. Our approach leverages vertically aligned BN to provide aligned diffusion paths for the reproducible migration process of metal ions from the electrodes and offers a potential solution for thermal management in electronic devices. This achievement highlights the promising potential of our neuristors for future high-density and energy-efficient neuromorphic computing.
License type:
Attribution-NonCommercial-NoDerivatives 4.0 International (CC BY-NC-ND 4.0)
Funding Info:
This research / project is supported by the National Natural Science Foundation of China - N/A
Grant Reference no. : 62274036

This research / project is supported by the National Research Foundation, Singapore - Competitive Research Program
Grant Reference no. : NRF-CRP24-2020-0002
Description:
ISSN:
1385-8947
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