Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors

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Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors
Title:
Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors
Journal Title:
2023 IEEE 25th Electronics Packaging Technology Conference (EPTC)
Keywords:
Publication Date:
18 March 2024
Citation:
Li, H. Y., Liu Huihong, C., Jaafar, N., Ahmadi, M., Kumar, M. D., Simonl, G. C. K., YanYan, Z., Mukherjee, M., & Jien, C. K. (2023, December 5). Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors. 2023 IEEE 25th Electronics Packaging Technology Conference (EPTC). https://doi.org/10.1109/eptc59621.2023.10457687
Abstract:
Si substrates provide flexible platform for quantum application that can integrate photonic components, active devices, and metal electrodes. Photonics integrated surface ion trap can effectively integrate the functionality of photonics integrated circuits and ion traps on the same Si-substrate. The ion trap electrodes are fabricated on a 300mm high resistivity substrate. Both leakage current and capacitance meet the device factional requirements at the wafer scale. The loaded Q-factor of the package at 9.8K is over 20, allowing application of 300V RF at low power at a trap drive frequency of 16 MHz for barium ion.
License type:
Publisher Copyright
Funding Info:
This research / project is supported by the National Research Foundation, Singapore - Quantum Engineering Program
Grant Reference no. : NRF2021-QEP2-03-P07

This research / project is supported by the A*STAR - Towards a scalable quantum machine learning solution using trapped ions (QEP 2.0)
Grant Reference no. : C222517002
Description:
© 2024 IEEE.  Personal use of this material is permitted.  Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISSN:
979-8-3503-2957-5
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