Process Optimization of Sc0.2Al0.8N Bimorph Stack Deposition on 200mm Si Wafer

Process Optimization of Sc0.2Al0.8N Bimorph Stack Deposition on 200mm Si Wafer

2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF)

10.1109/ISAF53668.2023.10265630

http://dx.doi.org/10.1109/isaf53668.2023.10265630

Peng Liu, Minghua Li, Huamao Lin, Zhan Jiang Quek, Binni Varghese, Yao Zhu

29 September 2023

Liu, P., Li, M., Lin, H., Quek, Z. J., Varghese, B., & Zhu, Y. (2023, July 23). Process Optimization of Sc0.2Al0.8N Bimorph Stack Deposition on 200mm Si Wafer. 2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF). https://doi.org/10.1109/isaf53668.2023.10265630

In this study, we investigated the microstructure and film properties of a bimorph structure with 20% Sc-doped AlN functional layers. The piezoelectric response of both the first and second Sc 0.2 Al 0.8 N films is obtained using DBLI method. Through deposition process optimization, we were able to ensure that the second Sc 0.2 Al 0.8 N layer exhibited comparable d 33,f and e 31,f value, crystallinity, and surface roughness as the first Sc 0.2 Al 0.8 N layer.

Publisher Copyright

This research / project is supported by the A*STAR - Ferroelectric Aluminum Scandium Nitride (Al1-xScxN) Thin Fi
Grant Reference no. : A20G9b0135

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https://oar.a-star.edu.sg/communities-collections/articles/20293

2375-0448

Institute of Microelectronics